Research

My research explores new device concepts and materials for superconducting electronics — with the ultimate goal of enabling ultralow-power computation at cryogenic temperatures.

Hybrid Superconducting–Semiconducting Electronics

We investigate hybrid circuits that combine epitaxial III–V semiconductors with thin-film superconductors. In particular, we developed the InAs-on-Insulator (InAs-OI) platform, where high-mobility InAs nanolayers are integrated on insulating substrates and contacted with superconducting metals. These hybrid systems allow us to engineer devices where:

  • Carrier density and band structure are electrostatically tunable (FET-like).
  • Dissipationless transport occurs via proximity-induced superconductivity.
  • Both semiconducting and superconducting degrees of freedom are accessible in the same lithographic process flow

The goal is to create field-programmable superconducting logic elements where gate electrodes actively control the superconducting state.

Superconducting Cryogenic Memory

Computation at the K or sub-K regime is useless without memory at the same temperature.
We developed device concepts for dense and non-volatile cryogenic memory that are compatible with superconducting logic families.
Our current directions include:

  • Nanoscaled superconducting memory array
  • Critical-current controlled memory cells
  • Phase-controllable Josephson memory

The key metric is energy per state writing and reading: target femtojoule-class switching with nanosecond-scale access without the thermal budget of CMOS DRAM refresh.

Materials Engineering for Cryogenic Temperatures

All of the above only works if the underlying materials behave well at temperatures lower than 4 K.
We work on:

  • Epitaxy of III–V semiconductors compatible with superconductors.
  • Interface transparency and disorder reduction.
  • Engineering of electrical properties at cryogenic temperatures.
  • Engineering of devices at cryogenic temperatures.

    • This includes both material growth/process integration, as well as low-temperature electrical characterization, backed by electrical simulations.